The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2008
Filed:
Nov. 28, 2005
Chul-hong Park, Kyungki-do, KR;
Moon-hyun Yoo, Kyungki-do, KR;
Yoo-hyon Kim, Seoul, KR;
Dong-hyun Kim, Seoul, KR;
Soo-han Choi, Kyungki-do, KR;
Chul-Hong Park, Kyungki-do, KR;
Moon-Hyun Yoo, Kyungki-do, KR;
Yoo-Hyon Kim, Seoul, KR;
Dong-Hyun Kim, Seoul, KR;
Soo-Han Choi, Kyungki-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of creating a layout of a set of masks including an alternating phase shifting mask (APSM) and a halftone phase shifting trim mask (HPSTM) is provided. The APSM includes first and second phase shifting areas and a first opaque pattern. The first and second phase shifting areas are disposed adjacent to each other and have different phases for generating destructive interference. Further, the first and second phase shifting areas define an access interconnection line. The first opaque pattern is formed on a transparent substrate to define the first and second phase shifting areas. The HPSTM includes a second opaque pattern on the transparent substrate and a halftone pattern. The second opaque pattern prevents an access interconnection line from being erased. The halftone pattern defines a pass interconnection line connected to the access interconnection line.