The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2008
Filed:
Mar. 25, 2004
Takatomo Sasaki, Suita, JP;
Yusuke Mori, Katano, JP;
Fumio Kawamura, Minoo, JP;
Masashi Yoshimura, Takarazuka, JP;
Yasunori Kai, Fukuoka, JP;
Mamoru Imade, Minoo, JP;
Yasuo Kitaoka, Ibaraki, JP;
Hisashi Minemoto, Hirakata, JP;
Isao Kidoguchi, Kawanishi, JP;
Takatomo Sasaki, Suita, JP;
Yusuke Mori, Katano, JP;
Fumio Kawamura, Minoo, JP;
Masashi Yoshimura, Takarazuka, JP;
Yasunori Kai, Fukuoka, JP;
Mamoru Imade, Minoo, JP;
Yasuo Kitaoka, Ibaraki, JP;
Hisashi Minemoto, Hirakata, JP;
Isao Kidoguchi, Kawanishi, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Other;
Abstract
The present invention provides a method of manufacturing a gallium nitride single crystal that can suppress the decomposition of gallium nitride and improve production efficiency in a sublimation method. According to the manufacturing method, a material (GaN powder) for the gallium nitride (GaN) single crystal is placed inside a crucible, sublimed or evaporated by heating, and cooled on a substrate surface to return to a solid again, so that the gallium nitride single crystal is grown on the substrate surface. The growth of the single crystal is performed under pressure. The pressure is preferably not less than 5 atm (5×1.013×10Pa). The single crystal is grown preferably in a mixed gas atmosphere containing NHand N.