The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7359237 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 15, 2008

Filed:

May. 17, 2004
Applicants:

Chien-chung Hung, Hsinchu, TW;

Ming-jer Kao, Hsinchu, TW;

Yung-hsiang Chen, Hsinchu, TW;

Shu-en LI, Hsinchu, TW;

Inventors:

Chien-Chung Hung, Hsinchu, TW;

Ming-Jer Kao, Hsinchu, TW;

Yung-Hsiang Chen, Hsinchu, TW;

Shu-En Li, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/15 (2006.01);
U.S. Cl.
CPC ...
Abstract

A low-power magnetic random access memory (MRAM) with high write selectivity is provided. Write word lines and pillar write word lines covered with a magnetic material are disposed in an zigzag relation, solving the magnetic interference problem generated by cells adjacent to the pillar write word line in the magnetic RAM with the pillar write word line form. According to the disclosed structure, each of the cells has a smaller bit size and a lower write current. This effectively reduces the power consumption of the MRAM.


Find Patent Forward Citations

Hung, Chien-Chung. (2008). High write selectivity and low power magnetic random access memory and method for fabricating the same (U.S. Patent No. 7359237). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7359237

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