The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2008
Filed:
Nov. 17, 2004
Masahiko Sasada, Kyoto, JP;
Hiroki Matsunaga, Takatsuki, JP;
Masashi Inao, Ibaraki, JP;
Hiroshi Ando, Ibaraki, JP;
Jinsaku Kaneda, Suita, JP;
Eisaku Maeda, Takatsuki, JP;
Akihiro Maejima, Takatsuki, JP;
Masahiko Sasada, Kyoto, JP;
Hiroki Matsunaga, Takatsuki, JP;
Masashi Inao, Ibaraki, JP;
Hiroshi Ando, Ibaraki, JP;
Jinsaku Kaneda, Suita, JP;
Eisaku Maeda, Takatsuki, JP;
Akihiro Maejima, Takatsuki, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
The collector, emitter, and base of a bipolar transistor circuit are connected to a high side power supply terminal, the drain of a level shift transistor, and a floating power supply terminal, respectively. When a high side output transistor is on, the floating power supply terminal is at the potential of a high potential power supply terminal. The high side power supply terminal is at a potential higher than the potential of the floating power supply terminal by a constant voltage. Turning the level shift transistor on, its drain potential drops below the potential of the floating power supply terminal; The base current flows through the bipolar transistor circuit and the drain potential of the level shift transistor is clamped near the potential of the floating power supply terminal; The bipolar transistor circuit is turned on and its collector current supplies the drain current of the level shift transistor.