The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2008
Filed:
Dec. 30, 2005
Hee-bok Kang, Ichon-shi, KR;
Jin-hong Ahn, Ichon-shi, KR;
Hee-Bok Kang, Ichon-shi, KR;
Jin-Hong Ahn, Ichon-shi, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
Provided is a semiconductor device that can secure a current consumption characteristic and an operating speed characteristic under a low power voltage environment. The semiconductor device is divided into a plurality of regions depending on the current consumption characteristics. Considering the current consumption characteristics of the corresponding regions, the ground voltage or the negative voltage is supplied as the base voltage. For example, in the memory region or the logic region, which exhibits the single transient low current characteristic, the negative voltage is supplied as the base voltage. On the contrary, in the output driver circuit region, the DLL or the PLL, which exhibits the high current characteristics, the ground voltage is supplied as the base voltage. In this case, the operating speed characteristic can be secured even under the low power supply environment without decreasing the threshold voltage of the transistor. In addition, the current consumption can be minimized in the power-down mode or the standby mode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile