The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2008
Filed:
Feb. 17, 2006
Applicant:
Mao-hsiung Kuo, Tainan County, TW;
Inventor:
Mao-Hsiung Kuo, Tainan County, TW;
Assignee:
Himax Technologies Limited, , TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03L 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A level shift circuit adds two NMOS transistors or two PMOS transistors between the NMOS transistors and PMOS transistors at the VP-side and the VN-side and connects the gates of the added transistors to the two output terminals. By this architecture, the level shift circuit of the present invention can successfully convert a small input voltage into a large output voltage with less DC current and/or without any additional bandgap circuit.
Kuo, Mao-Hsiung. (2008). High performance level shift circuit with low input voltage (U.S. Patent No. 7358790). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7358790
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile