The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2008
Filed:
Nov. 17, 2004
Vipulkumar Patel, Monmouth Junction, NJ (US);
Margaret Ghiron, Allentown, PA (US);
Prakash Gothoskar, Allentown, PA (US);
Robert Keith Montgomery, Easton, PA (US);
Soham Pathak, Allentown, PA (US);
David Piede, Allentown, PA (US);
Kalpendu Shastri, Orefield, PA (US);
Katherine A. Yanushefski, Zionsville, PA (US);
Vipulkumar Patel, Monmouth Junction, NJ (US);
Margaret Ghiron, Allentown, PA (US);
Prakash Gothoskar, Allentown, PA (US);
Robert Keith Montgomery, Easton, PA (US);
Soham Pathak, Allentown, PA (US);
David Piede, Allentown, PA (US);
Kalpendu Shastri, Orefield, PA (US);
Katherine A. Yanushefski, Zionsville, PA (US);
SiOptical, Inc., Allentown, PA (US);
Abstract
A silicon-based IR photodetector is formed within a silicon-on-insulator (SOI) structure by placing a metallic strip (preferably, a silicide) over a portion of an optical waveguide formed within a planar silicon surface layer (i.e., 'planar SOI layer') of the SOI structure, the planar SOI layer comprising a thickness of less than one micron. Room temperature operation of the photodetector is accomplished as a result of the relatively low dark current associated with the SOI-based structure and the ability to use a relatively small surface area silicide strip to collect the photocurrent. The planar SOI layer may be doped, and the geometry of the silicide strip may be modified, as desired, to achieve improved results over prior art silicon-based photodetectors.