The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2008
Filed:
Dec. 29, 2005
Chee Hong Choi, Busan, KR;
Chee Hong Choi, Busan, KR;
Dongbu Electronics Co., Ltd., Seoul, KR;
Abstract
A semiconductor device having a silicide-blocking layer is provided. The device includes a field oxide layer defining an active region, source/drain regions in the active region of a substrate, a gate oxide layer and a gate electrode on the substrate between the source/drain regions, dielectric spacers on sidewalls of the gate electrode, and a silicide layer on both the gate electrode and the source/drain regions. The device also includes the silicide-blocking layer formed over the border between the field oxide layer and the source/drain regions. The silicide-blocking layer covers edges of the source/drain regions, obstructing the extension of the silicide layer.