The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2008
Filed:
Sep. 05, 2006
Applicant:
Tatsuo Harada, Tokyo, JP;
Inventor:
Tatsuo Harada, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
An n-type first base layer is formed on a semiconductor substratehaving a first major surface and a second major surface, and a p-type second base layer is formed thereon. Between the first base layer and the second base layer, a carrier stored layer is formed. The carrier stored layer has a high-concentration impurity layer and a low concentration impurity layer, and the high-concentration impurity layer has a thickness of 1.5 μm or more and an impurity concentration therethrough is made to be 1.0×10cmor more throughout the layer.