The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 15, 2008

Filed:

Mar. 30, 2005
Applicants:

Takahiko Sakamoto, Anan, JP;

Yasutaka Hamaguchi, Anan, JP;

Inventors:

Takahiko Sakamoto, Anan, JP;

Yasutaka Hamaguchi, Anan, JP;

Assignee:

Nichia Corporation, Tokushima, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nitride semiconductor light emitting device comprising an n-side nitride semiconductor layer and a p-side nitride semiconductor layer formed on a substrate, with a light transmitting electrodeformed on the p-side nitride semiconductor layer, and the p-side pad electrodeformed for the connection with an outside circuit, and the n-side pad electrodeformed on the n-side nitride semiconductor layer for the connection with the outside circuit, so as to extract light on the p-side nitride semiconductor layer side, wherein taper angles of end faces of the light transmitting electrodeand/or the p-side nitride semiconductor layer are made different depending on the position.


Find Patent Forward Citations

Sakamoto, Takahiko. (2008). Nitride semiconductor light emitting device (U.S. Patent No. 7358544). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7358544

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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