The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 15, 2008

Filed:

Dec. 03, 2004
Applicants:

Tae-yeon Seong, Gwangju-si, KR;

June-o Song, Gwangju-si, KR;

Dong-seok Leem, Gwangju-si, KR;

Inventors:

Tae-yeon Seong, Gwangju-si, KR;

June-o Song, Gwangju-si, KR;

Dong-seok Leem, Gwangju-si, KR;

Assignees:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Gwangju Institute of Science and Technology, Buk-Gu, Gwangju-Si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/22 (2006.01); H01L 29/227 (2006.01); H01L 33/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided are a flip-chip light emitting diode (FCLED) and a method of manufacturing the same. The provided FCLED is formed by sequentially depositing an n-type cladding layer, an active layer, a p-type cladding layer, and a reflective layer on a substrate. The reflective layer is formed of the alloy of silver to which a solute element is added. According to the provided FCLED and the method of manufacturing the same, a thermal stability is improved to improve an ohmic contact characteristic to a p-type cladding layer, thus a wire bonding efficiency and a yield are improved when packaging the provided FCLED. In addition, the light emitting efficiency and the lifespan of the provided FCLED are improved due to a low specific-contact resistance and an excellent current-voltage characteristic.


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