The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2008
Filed:
Mar. 09, 2005
Applicants:
Cay-uwe Pinnow, Munich, DE;
Klaus-dieter Ufert, Unterschleissheim, DE;
Inventors:
Cay-Uwe Pinnow, Munich, DE;
Klaus-Dieter Ufert, Unterschleissheim, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01); H01L 47/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor memory cell, a method for fabricating it and a semiconductor memory device. A phase change material region of a storage element of the semiconductor memory cell has been or is formed as a lining region of a wall region of a contact recess which passes all the way through an insulation region between a first electrode device and a second electrode device. Furthermore, the space or region of the contact recess which is not taken up by the material region of the storage element has been or is made substantially electrically insulating.