The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2008
Filed:
Sep. 19, 2005
David Ruiz-alonso, Cambridge, GB;
Andrew Koehl, Cambridge, GB;
Paul Boyle, London, GB;
Martyn Rush, Cambridge, GB;
Russell Parris, Cambridge, GB;
Ashley Wilks, Cambridge, GB;
David Ruiz-Alonso, Cambridge, GB;
Andrew Koehl, Cambridge, GB;
Paul Boyle, London, GB;
Martyn Rush, Cambridge, GB;
Russell Parris, Cambridge, GB;
Ashley Wilks, Cambridge, GB;
Owlstone Nanotech, Inc., New York, NY (US);
Abstract
An ion gate is disposed between a first volume occupied by a first carrier gas and ions of the first carrier gas and a second volume occupied by a second carrier gas. The ion gate includes at least one channel connecting the first volume to the second volume, a first electrode disposed on an inlet surface of the ion gate facing the first volume, and a second electrode disposed on an outlet surface of the ion gate facing the second volume. Ions are transported from the first volume to the second volume through the channel under an electric field produced by the first and second electrode.