The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2008
Filed:
Dec. 12, 2003
Yezdi Dordi, Palo Alto, CA (US);
John Boyd, Atascadero, CA (US);
William Thie, Mountain View, CA (US);
Bob Maraschin, Cupertino, CA (US);
Fred C. Redeker, Fremont, CA (US);
Joel M. Cook, Warrenton, VA (US);
Yezdi Dordi, Palo Alto, CA (US);
John Boyd, Atascadero, CA (US);
William Thie, Mountain View, CA (US);
Bob Maraschin, Cupertino, CA (US);
Fred C. Redeker, Fremont, CA (US);
Joel M. Cook, Warrenton, VA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer ('wafer'). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.