The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 15, 2008

Filed:

Mar. 16, 2006
Applicants:

Akira Tanaka, Kanagawa-ken, JP;

Masaaki Onomura, Tokyo, JP;

Seiji Iida, Kanagawa-ken, JP;

Takayuki Matsuyama, Kanagawa-ken, JP;

Inventors:

Akira Tanaka, Kanagawa-ken, JP;

Masaaki Onomura, Tokyo, JP;

Seiji Iida, Kanagawa-ken, JP;

Takayuki Matsuyama, Kanagawa-ken, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing a compound semiconductor device comprises forming a scribed groove extending from an edge of a major surface of a laminated body to an internal region on the first major surface. The laminated body has the first major surface and a second major surface and is formed by crystal growth of a compound semiconductor multilayer film on a substrate. The scribed groove is shallow at the edge and deep in the internal region. The method may further comprise separating the laminated body into first and second portions separated by a separation plane including the scribed groove by applying load to the second major surface of the laminated body.


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