The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2008
Filed:
Jun. 30, 2006
Byung Soo Park, Icheon-si, KR;
Byung Soo Park, Icheon-si, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A method of forming a resistor of a flash memory device includes etching an isolation structure provided on a semiconductor substrate to form a first trench. A polysilicon structure is formed within the first trench of the isolation structure. A dielectric layer is formed on the polysilicon structure. A polysilicon layer is formed over the dielectric layer. The polysilicon layer is etched to define second and third trenches in the polysilicion layer. The second and third trenches separates the polysilicon layer into first, second, and third sections, where the first and third section contact the polysilicon structure, and the second section is separated from the first and third sections. An insulating film is formed over the etched polysilicion layer, the insulating film filling the second and third trenches. the first section of the polysilicon layer, the polysilicon structure, and the third section of the polysilicon layer define a resistor.