The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2008
Filed:
Dec. 18, 2002
Lisa Pfefferle, Branford, CT (US);
Gary Haller, New Haven, CT (US);
Dragos Ciuparu, New Haven, CT (US);
Lisa Pfefferle, Branford, CT (US);
Gary Haller, New Haven, CT (US);
Dragos Ciuparu, New Haven, CT (US);
Yale University, New Haven, CT (US);
Abstract
A transition metal substituted, amorphous mesoporous silica framework with a high degree of structural order and a narrow pore diameter distribution (±0.15 nm FWHM) was synthesized and used for the templated growth of single walled carbon nanotubes (SWNT). The physical properties of the SWNT (diameter, diameter distribution, electronic characteristic) can be controlled by the template pore size and the pore wall chemistry. The SWNT can find applications, for example, in chemical sensors and nanoscale electronic devices, such as transistors and crossbar switches.