The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2008
Filed:
Feb. 26, 2007
Peijun J. Chen, Dallas, TX (US);
Duofeng Yue, Plano, TX (US);
Amitabh Jain, Allen, TX (US);
Sue E. Crank, Gordonville, TX (US);
Thomas D. Bonifield, Dallas, TX (US);
Homi C. Mogul, McKinney, TX (US);
Peijun J. Chen, Dallas, TX (US);
Duofeng Yue, Plano, TX (US);
Amitabh Jain, Allen, TX (US);
Sue E. Crank, Gordonville, TX (US);
Thomas D. Bonifield, Dallas, TX (US);
Homi C. Mogul, McKinney, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present invention provides a semiconductor device, a method of manufacture therefore and a method for manufacturing an integrated circuit including the same. The semiconductor device, among other elements, may include a substrate (), as well as a nickel silicide region () located over the substrate (), the nickel silicide region () having an amount of indium located therein.