The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2008
Filed:
Sep. 08, 2005
Chih-feng Huang, Jhubei, TW;
Ta-yung Yang, Milpitas, CA (US);
Jenn-yu G. Lin, Taipei, TW;
Tuo-hsin Chien, Tucheng, TW;
Chih-Feng Huang, Jhubei, TW;
Ta-yung Yang, Milpitas, CA (US);
Jenn-yu G. Lin, Taipei, TW;
Tuo-Hsin Chien, Tucheng, TW;
System General Corp., Taipei, Hsien, TW;
Abstract
An electrostatic discharge (ESD) device with a parasitic silicon controlled rectifier (SCR) structure and controllable holding current is provided. A first distance is kept between a first N+ doped region and a first P+ doped region, and a second distance is kept between a second P+ doped region and a third N+ doped region. In addition, the holding current of the ESD device can be set to a specific value by modulating the first distance and the second distance. The holding current is in inverse proportion to the first distance and the second distance.