The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2008
Filed:
Oct. 26, 2005
Paul W. Brazis, South Elgin, IL (US);
Daniel R. Gamota, Palatine, IL (US);
Krishna Kalyanasundaram, Elmhurst, IL (US);
Jie Zhang, Buffalo Grove, IL (US);
Paul W. Brazis, South Elgin, IL (US);
Daniel R. Gamota, Palatine, IL (US);
Krishna Kalyanasundaram, Elmhurst, IL (US);
Jie Zhang, Buffalo Grove, IL (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
An apparatus () such as a semiconductor device comprises a gate electrode () and at least a first electrode (). The first electrode preferably has an established perimeter that at least partially overlaps with respect to the gate electrode to thereby form a corresponding transistor channel. In a preferred approach the first electrode has a surface area that is reduced notwithstanding the aforementioned established perimeter. This, in turn, aids in reducing any corresponding parasitic capacitance. This reduction in surface area may be accomplished, for example, by providing openings () through certain portions of the first electrode.