The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2008
Filed:
Feb. 24, 2006
Noriyuki Shimoji, Kyoto, JP;
Masaki Takaoka, Kyoto, JP;
Noriyuki Shimoji, Kyoto, JP;
Masaki Takaoka, Kyoto, JP;
Rohm Co., Ltd., Kyoto-shi, Kyoto, JP;
Abstract
A method of producing a semiconductor device is disclosed, in which a through hole is formed in the upper surface of a semiconductor substrate from the lower surface thereof, and an opening of a desired size is formed in a desired position on the upper surface of the substrate. A guide that functions as an etching stopper is formed in the semiconductor substrate. An opening having a width Wis formed in the guide. The opening faces an opening in a mask used in the formation of a through hole, and the width Wthereof is narrower than a width Wof the opening in the mask. The direction in which etching progresses is controlled by the opening formed in the guide as etching is conducted from a lower surface of the substrate to an upper surface of the substrate, and thus deviations in the width Wand position of an opening in the upper surface of the substrate can be controlled.