The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2008
Filed:
Jul. 12, 2005
Applicants:
Mona M. Eissa, Plano, TX (US);
Troy A. Yocum, Plano, TX (US);
Inventors:
Mona M. Eissa, Plano, TX (US);
Troy A. Yocum, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
The invention describes a method for the selective dry etching of tantalum and tantalum nitride films. Tantalum nitride layers () are often used in semiconductor manufacturing. The semiconductor substrate is exposed to a reducing plasma chemistry which passivates any exposed copper (). The tantalum or tantalum nitride films are selectively removed using an oxidizing plasma chemistry.