The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2008
Filed:
Feb. 03, 2005
Werner Seifert, Lund, SE;
Lars Ivar Samuelson, Malmö, SE;
Björn Jonas Ohlsson, Malmö, SE;
Lars Magnus Borgström, Eindhoven, NL;
Werner Seifert, Lund, SE;
Lars Ivar Samuelson, Malmö, SE;
Björn Jonas Ohlsson, Malmö, SE;
Lars Magnus Borgström, Eindhoven, NL;
QuNano AB, Lund, SE;
Abstract
Nanowhiskers are grown in a non-preferential growth direction by regulation of nucleation conditions to inhibit growth in a preferential direction. In a preferred implementation, <001> III-V semiconductor nanowhiskers are grown on an (001) III-V semiconductor substrate surface by effectively inhibiting growth in the preferential <111>B direction. As one example, <001> InP nano-wires were grown by metal-organic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy revealed wires with nearly square cross sections and a perfect zincblende crystalline structure that is free of stacking faults.