The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 08, 2008

Filed:

Jun. 29, 2005
Applicants:

Seung Ryull Park, Anyang-shi, KR;

Sang Hee Yu, Gunpo-shi, KR;

Inventors:

Seung Ryull Park, Anyang-shi, KR;

Sang Hee Yu, Gunpo-shi, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for fabricating a color-filter on transistor (COT) type LCD device, to improve the yield by simplifying the fabrication process with diffraction exposure, which includes the steps of forming a gate line, a gate electrode, a gate pad and a data pad on a substrate; depositing a gate insulating layer and an active layer; forming a data line intersecting the gate line to define a unit pixel region, source and drain electrode on the active layer, and first and second connection conductive layers forming an insulating interlayer on the remaining portions except the first and second connection conductive layers and the drain electrode; forming a color filter layer and a black matrix layer on the insulating interlayer; forming an overcoat layer on the remaining portions of the color filter layer except the first and second connection conductive layers and the drain electrode.


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