The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2008
Filed:
May. 04, 2006
Robinson E. Pino, Milton, VT (US);
Henry W. Trombley, Starksboro, VT (US);
Josef S. Watts, South Burlington, VT (US);
Robinson E. Pino, Milton, VT (US);
Henry W. Trombley, Starksboro, VT (US);
Josef S. Watts, South Burlington, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of modeling statistical variation of field effect transistors having fingers physically measures characteristics of existing transistors and extracts a scaled simulation based on the characteristics of the existing transistors using a first model. The method creates synthetic single finger data using the scaled simulation. The method physically measures characteristics of existing pairs of matched transistors and extracts random dopant fluctuations from the characteristics of the existing pairs of matched transistors using a second model that is different than the first model. The method extracts a single finger from the synthetic single finger data and the random dopant fluctuations using the first model. The method can also create an ensemble model by determining the skew between a typical single device model and a typical ensemble model. The method adjusts parameters of the first model to cause the single finger to match targets for the single finger. Also, the method produces the centered scalable single finger model (model C) after the adjustments are complete.