The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2008
Filed:
Apr. 27, 2007
Jenq-yang Chang, Taoyuan, TW;
Mount-learn Wu, Taoyuan, TW;
Che-lung Hsu, Taoyuan, TW;
Chih-ming Wang, Taoyuan, TW;
Yung-chih Liu, Taoyuan, TW;
Yue-hong Chou, Taoyuan, TW;
Ya-lun Tsai, Taoyuan, TW;
Chien-chieh Lee, Taoyuan, TW;
Jenq-Yang Chang, Taoyuan, TW;
Mount-Learn Wu, Taoyuan, TW;
Che-Lung Hsu, Taoyuan, TW;
Chih-Ming Wang, Taoyuan, TW;
Yung-Chih Liu, Taoyuan, TW;
Yue-Hong Chou, Taoyuan, TW;
Ya-Lun Tsai, Taoyuan, TW;
Chien-Chieh Lee, Taoyuan, TW;
National Central University, Taoyuan, TW;
Abstract
A silicon bulk-micromachining technology is used to fabricate a GMR filter by exploiting the structure of a suspended silicon nitride (SiNx) membrane on the silicon substrate. A first silicon nitride (SiNx) thin film and a second silicon nitride (SiNx) thin film are formed on opposite sides of the silicon substrate. A first opening is defined in the first silicon nitride (SiNx) thin film, and a grating structure is defined in the second silicon nitride (SiNx) thin film. By etching off a portion of the silicon substrate exposed from the first opening until a portion of the second silicon nitride (SiNx) thin film is exposed from the first opening, a light path space is defined.