The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2008
Filed:
Mar. 15, 2005
Hyuck-jin Kang, Seoul, KR;
Chang-suk Hyun, Yongin-si, KR;
Il-young Moon, Seongnam-si, KR;
Kang-yoon Lee, Seongnam-si, KR;
Kwang-bo Sim, Seoul, KR;
Sang-kil Jeon, Yongin-si, KR;
Hyuck-Jin Kang, Seoul, KR;
Chang-Suk Hyun, Yongin-si, KR;
Il-Young Moon, Seongnam-si, KR;
Kang-Yoon Lee, Seongnam-si, KR;
Kwang-bo Sim, Seoul, KR;
Sang-Kil Jeon, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
In a fuse region of a semiconductor device, and a method of fabricating the same, the fuse region includes an interlayer insulating layer on a semiconductor substrate, a plurality of fuses on the interlayer insulating layer disposed in parallel with each other, a blocking layer on the interlayer insulating layer between each of the plurality of fuses and in parallel with the plurality of fuses, and a plurality of fuse grooves recessed into the interlayer insulating layer between each of the plurality of fuses and the blocking layer.