The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7352044 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 01, 2008

Filed:

Jan. 16, 2004
Applicants:

Hiroshi Yamada, Tokyo, JP;

Hisao Morooka, Tokyo, JP;

Kazuo Nishi, Atsugi, JP;

Inventors:

Hiroshi Yamada, Tokyo, JP;

Hisao Morooka, Tokyo, JP;

Kazuo Nishi, Atsugi, JP;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A solar batterycomprises a metal electrode layer, a pin junction, and a transparent electrode layerwhich are successively laminated on a substratesuch as a silicon substrate. The pin junctioncomprises an n-layer, an i-layer, and a p-layerwhich are laminated in succession. The i-layeris formed by amorphous iron silicide (FeSi:H) containing hydrogen atoms. In the i-layer, at least a part of the hydrogen atoms contained therein terminate dangling bonds of silicon atoms and/or iron atoms, so that a number of trap levels which may occur in an amorphous iron silicide film can be eliminated, whereby the i-layerexhibits a characteristic as an intrinsic semiconductor layer.


Find Patent Forward Citations

Yamada, Hiroshi. (2008). Photoelectric transducer, photoelectric transducer apparatus, and iron silicide film (U.S. Patent No. 7352044). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7352044

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