The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2008
Filed:
Feb. 21, 2002
Hiroshi Iwata, Nara, JP;
Akihide Shibata, Nara, JP;
Seizo Kakimoto, Nara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
There is provided a semiconductor storage device capable of high integration. On a top surface of a semiconductor substrate, a plurality of device isolation regions () each extending and meandering in a lateral direction are formed so as to be arrayed with respect to a longitudinal direction, by which active regions are defined between neighboring ones of the device isolation regions (), respectively. Dopant diffusion regions (source or drain) are formed at individual turnover portions (corresponding to contacts (), ()), respectively, of the meanders within the active regions. A plurality of word lines () extending straight in the longitudinal direction run on the channel regions within the active regions via a film having memory function, respectively. A first bit line () extending straight in the lateral direction runs on the dopant diffusion region (corresponding to contact ()) provided at a crest-side turnover portion. A second bit line () extending straight in the lateral direction runs on the dopant diffusion region (corresponding to contact ()) provided at a trough-side turnover portion.