The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2008
Filed:
Sep. 26, 2002
Peter D. Brewer, Westlake Village, CA (US);
Carl W. Pobanz, Rancho Palos Verdes, CA (US);
Peter D. Brewer, Westlake Village, CA (US);
Carl W. Pobanz, Rancho Palos Verdes, CA (US);
HRL Laboratories, LLC, Malibu, CA (US);
Abstract
A method for fabricating high performance vertical and horizontal electrical connections in a three dimensional semiconductor structure. A dielectric film is imprinted with a stamp pattern at high vacuum and with precise temperature and stamping pressure control. The stamp pattern may be formed on a substrate using semiconductor fabrication techniques. After the dielectric film is stamped, residual dielectric film is removed to allow access to an underlying layer. Via and trench regions formed within the dielectric film by stamping are then metalized to provide the high performance interconnections. Multiple layers of interconnections in the three dimensional structure are provided by stacking layers of stamped and metalized dielectric films on top of each other.