The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2008
Filed:
Aug. 03, 2006
Jeong-hoon Ahn, Yongin-si, KR;
Kyung-tae Lee, Seoul, KR;
Yoon-hae Kim, Seongnam-si, KR;
Abstract
Disclosed are methods for carrying out a damascene process in semiconductor fabrication including the steps of: forming an intermetal dielectric film on a semiconductor substrate; patterning the intermetal dielectric film and forming an intermetal dielectric pattern comprising at least two layers of different chemical compositions that includes at least an opening penetrating the intermetal dielectric film; forming a conductive film to fill the opening on the intermetal dielectric pattern; and etching the conductive film by means of a chemical/mechanical polishing operation until exposing an upper face of the intermetal dielectric pattern and the top of the filled opening so as to form a conductive pattern. An etching process is then performed to selectively remove an upper portion of the intermetal dielectric pattern. Because the intermetal dielectric film is variable in chemical composition according to different constituent layers, the upper portion of the intermetal dielectric pattern can be selectively removed by using a chemical etching composition that demonstrates etching selectivity relative to the different layers of the intermetal dielectric film.