The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2008
Filed:
Apr. 08, 2002
Applicants:
Shunpei Yamazaki, Tokyo, JP;
Setsuo Nakajima, Kanagwa, JP;
Ritsuko Kawasaki, Kanagawa, JP;
Inventors:
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
To provide a technique required for purifying the interface between an active layer and an insulating film. On a substrate (), a gate wiring () is formed and the surface thereof is covered with a gate oxide film (). Then, a first insulating film (), a second insulating film (), a semiconductor film () and a protective film () are sequentially formed and layered without exposing them to the air. Further, the semiconductor film () is irradiated with laser light through the protective film (). In this way, a TFT may be given good characteristics by completely purifying the interface of the semiconductor film.