The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2008
Filed:
Sep. 08, 2004
Kazutoshi Ishii, Chiba, JP;
Jun Osanai, Chiba, JP;
Yuichiro Kitajima, Chiba, JP;
Yukimasa Minami, Chiba, JP;
Keisuke Uemura, Chiba, JP;
Miwa Wake, Chiba, JP;
Kazutoshi Ishii, Chiba, JP;
Jun Osanai, Chiba, JP;
Yuichiro Kitajima, Chiba, JP;
Yukimasa Minami, Chiba, JP;
Keisuke Uemura, Chiba, JP;
Miwa Wake, Chiba, JP;
Seiko Instruments Inc., , JP;
Abstract
In a manufacturing method for a semiconductor device, a main body wafer having an interlayer insulating film is formed, and a monitor wafer on which a monitor element is formed is provided. Characteristics of the main body wafer are copied onto the monitor element by simultaneously processing the main body wafer and the monitor wafer through BPSG densification during formation of the interlayer insulating film. The characteristic of the monitor element is measured by checking a process influence of the monitor element. Manufacturing conditions are set in accordance with the process influence of the monitor element. Variations in electric characteristics of the main body wafer are reduced in accordance with the set manufacturing conditions.