The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2008
Filed:
Dec. 07, 2005
Applicants:
Hung-jen Chu, Nantou, TW;
Nei-jen Hsiao, Chia-I, TW;
Hui-chung Shen, Tainan, TW;
Meng-chi Liou, Tao-Yuan, TW;
Inventors:
Hung-Jen Chu, Nantou, TW;
Nei-Jen Hsiao, Chia-I, TW;
Hui-Chung Shen, Tainan, TW;
Meng-Chi Liou, Tao-Yuan, TW;
Assignee:
Chunghwa Picture Tubes, Ltd., Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0328 (2006.01);
U.S. Cl.
CPC ...
Abstract
The thin film transistor has a non-transparent structure besides and insulated with the gate. Hence, the light transmitted from the substrate is blocked and the light current induced in the thin film transistor is negligible. The method uses a mask with a slit pattern to form a non-uniform photoresist. Hence, the mask could be used to pattern two conductor layers for forming source/drain/channel.