The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2008
Filed:
Oct. 18, 2004
Koji Tanizawa, Tokushima, JP;
Koji Tanizawa, Tokushima, JP;
Nichia Corporation, Tokushima, JP;
Abstract
The present invention provides a nitride semiconductor light emitting device with an active layer of the multiple quantum well structure, in which the device has an improved luminous intensity and a good electrostatic withstanding voltage, thereby allowing the expanded application to various products. The active layeris formed of a multiple quantum well structure containing InGaN (0≦a<1). The p-cladding layeris formed on said active layer containing the p-type impurity. The p-cladding layeris mode of a multi-film layer including a first nitride semiconductor film containing Al and a second nitride semiconductor film having a composition different from that of said first nitride semiconductor film. Alternatively, the p-cladding layeris made of single-layered layer made of AlGaN (0≦b≦1). A low-doped layeris grown on the p-cladding layerhaving a p-type impurity concentration lower than that of the p-cladding layer. A p-contact layer is grown on the low-doped layerhaving a p-type impurity concentration higher than those of the p-cladding layerand the low-doped layer