The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2008
Filed:
Oct. 05, 2005
Applicant:
Christoph Bromberger, Heilbronn, DE;
Inventor:
Christoph Bromberger, Heilbronn, DE;
Assignee:
Atmel Germany GmbH, Heilbronn, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/335 (2006.01); H01L 21/336 (2006.01); H01L 21/8232 (2006.01);
U.S. Cl.
CPC ...
Abstract
A process for manufacturing a semiconductor device, provides that a silicide layer is formed, an amorphous semiconductor layer is applied both to the silicide layer and to an open monocrystalline semiconductor region, adjacent to the silicide layer, and during a subsequent temperature treatment, the amorphous semiconductor layer is crystallized proceeding from the open, monocrystalline semiconductor region, acting as a crystallization nucleus, so that the silicide layer is covered at least partially by a crystallized, monocrystalline semiconductor layer.