Creation of anisotropic strain in semiconductor quantum well

Abstract

Methods and devices for creating an anisotropic strain in a semiconductor quantum well structure to induce anisotropy thereof are disclosed herein. Initially, a substrate is provided, and a quantum well structure formed upon the substrate. A first crystalline layer (e.g., a GaAs layer) having a first crystalline phase can then be deposited upon the quantum well structure. Thereafter, a second crystalline layer (e.g., a GaN layer) having a second crystalline phase and a thickness thereof can be formed upon the first crystalline layer to thereby induce an anisotropic strain in the quantum well structure to produce a quantum well device thereof. Additionally, the second crystalline layer (e.g., GaN) can be formed from a transparent material and utilized as an anti-reflection layer. By properly choosing the thickness of the second crystalline layer (e.g., a GaN layer), a desired anisotropic strain as well as a desired anti-reflection wavelength can be achieved.