The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2008
Filed:
Mar. 03, 2006
Soo Min Lee, Seoul, KR;
Rak Jun Choi, Tokushima, JP;
Naoi Yoshiki, Tokushima, JP;
Sakai Shiro, Tokushima, JP;
Masayoshi Koike, Kyungki-do, KR;
Soo Min Lee, Seoul, KR;
Rak Jun Choi, Tokushima, JP;
Naoi Yoshiki, Tokushima, JP;
Sakai Shiro, Tokushima, JP;
Masayoshi Koike, Kyungki-do, KR;
Samsung Electro-Mechanics Co. Ltd., Suwon, Kyungki-Do, KR;
The University of Tokushima, Tokushima, JP;
Abstract
The invention provides a method of growing a non-polar a-plane gallium nitride. In the method, first, an r-plane substrate is prepared. Then, a low-temperature nitride-based nucleation layer is deposited on the substrate. Finally, the non-polar a-plane gallium nitride is grown on the nucleation layer. In growing the non-polar a-plane gallium nitride, a gallium source is supplied at a flow rate of about 190 to 390 μmol/min and the flow rate of a nitrogen source is set to produce a V/III ratio of about 770 to 2310.