The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2008
Filed:
Mar. 28, 2005
Elizabeth C. Glass, Gilbert, AZ (US);
Olin L. Hartin, Chandler, AZ (US);
Ngai Ming Lau, Fountain Hills, AZ (US);
Neil T. Tracht, Mesa, AZ (US);
Elizabeth C. Glass, Gilbert, AZ (US);
Olin L. Hartin, Chandler, AZ (US);
Ngai Ming Lau, Fountain Hills, AZ (US);
Neil T. Tracht, Mesa, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
Methods and apparatus are provided for RF switches () integrated in a monolithic RF transceiver IC () and switched gain amplifier (). Multi-gate n-channel enhancement mode FETs (Q-Q-) are used with single gate FETs (), resistors (Rb, Rg, Re, R-R) and capacitors (C-C) formed by the same manufacturing process. The multiple gates () of the FETs (Q-Q-) are parallel coupled, spaced-apart and serially arranged between source () and drain (). When used in pairs () to form a switch () for a transceiver () each FET has its source () coupled to an antenna RF I/O port () and drains coupled respectively to second and third RF I/O ports () leading to the receiver side () or transmitter side () of the transceiver (). The gates () are coupled to control ports (). When used in pairs (Q-Q-) to form a variable switched attenuator, the first FET (Q-) is a pass device and the second FET (Q-) is a shunt device that respectively bridge two series resistors (RR) and block a shunt resistor (R) of a T-type attenuator.