The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2008

Filed:

Feb. 01, 2006
Applicants:

Eun-chul Park, Yongin-si, KR;

Han-seung Lee, Ansan-si, KR;

Gyu-hyung Cho, Daejon, KR;

Hee-seok Han, Daejon, KR;

Inventors:

Eun-chul Park, Yongin-si, KR;

Han-seung Lee, Ansan-si, KR;

Gyu-hyung Cho, Daejon, KR;

Hee-seok Han, Daejon, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

An ultra wideband filter is provided that filters an input signal using a pair of cross-coupled transistors with a small size and small power consumption. The ultra wideband filter includes a reference current generator unit generating a reference current using a bias signal of a predetermined level, a transconductor unit that is biased by the reference current and converts a predetermined input voltage into a current of a predetermined amount to output the current if the input voltage is applied thereto, and a filter unit that outputs a predetermined output voltage corresponding to the output current of the transconductor unit using a plurality of cross-coupled transistors and capacitors. The filter unit may include cross-coupled nMOS and pMOS transistors, and first and second capacitors respectively connected to respective drain terminals of the nMOS and pMOS transistors. Accordingly, the ultra wideband filter can be designed in a minimum size.


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