The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2008
Filed:
Nov. 02, 2006
Hiroyuki Hoshizaki, Kanagawa, JP;
Hiroshi Furuta, Kanagawa, JP;
Hiroyuki Hoshizaki, Kanagawa, JP;
Hiroshi Furuta, Kanagawa, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
A semiconductor device having a field effect transistor formed on a semiconductor layer on an insulator, comprising: a drain electrode wiring formed over a drain region of the field effect transistor; a source electrode wiring formed over a source region of the field effect transistor; first contact plugs connecting the drain region and the drain electrode wiring; and second contact plugs which connect the source region and the source electrode wiring, and the number of which is greater than the first contact plugs.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile