The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2008
Filed:
Dec. 27, 2006
Applicants:
Ky-hyun Han, Ichon-shi, KR;
Ki-won Nam, Ichon-shi, KR;
Inventors:
Ky-Hyun Han, Ichon-shi, KR;
Ki-Won Nam, Ichon-shi, KR;
Assignee:
Hynix Semiconductor Inc., Kyoungki-do, KR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01); H01L 21/302 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A recess gate of a semiconductor device includes: a substrate having a bulb-shaped recess pattern formed therein, wherein the bulb-shaped recess pattern includes a first ball pattern and a second ball pattern formed therein, the first ball pattern having a different diameter than the second ball pattern; a gate insulation layer formed over the bulb-shaped recess pattern and the substrate; and a conductive layer formed over the gate insulation layer and filling the bulb-shaped recess pattern.