The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2008
Filed:
Sep. 14, 2005
Thomas W. Tombler, Jr., Goleta, CA (US);
Brian Y. Lim, Santa Barbara, CA (US);
Thomas W. Tombler, Jr., Goleta, CA (US);
Brian Y. Lim, Santa Barbara, CA (US);
Atomate Corporation, Simi Valley, CA (US);
Abstract
Single-walled carbon nanotube transistor and rectifying devices, and associated methods of making such devices include a porous structure for the single-walled carbon nanotubes. The porous structure may be anodized aluminum oxide or another material. Electrodes for source and drain of a transistor are provided at opposite ends of the single-walled carbon nanotube devices. A gate region may be provided one end or both ends of the porous structure. The gate electrode may be formed into the porous structure. A transistor of the invention may be especially suited for power transistor or power amplifier applications.