The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2008
Filed:
Oct. 20, 2006
Peijun J. Chen, Dallas, TX (US);
Duofeng Yue, Plano, TX (US);
Amitabh Jain, Allen, TX (US);
Sue Crank, Coppell, TX (US);
Thomas D. Bonifield, Dallas, TX (US);
Homi Mogul, McKinney, TX (US);
Peijun J. Chen, Dallas, TX (US);
Duofeng Yue, Plano, TX (US);
Amitabh Jain, Allen, TX (US);
Sue Crank, Coppell, TX (US);
Thomas D. Bonifield, Dallas, TX (US);
Homi Mogul, McKinney, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The invention provides a semiconductor device, a method of manufacture therefore and a method for manufacturing an integrated circuit including the same. The semiconductor device, among other elements, may include a gate structure located over a substrate, the gate structure including a gate dielectric layer and gate electrode layer. The semiconductor device may further include source/drain regions located in/over the substrate and adjacent the gate structure, and a nickel alloy silicide located in the source/drain regions, the nickel alloy silicide having an amount of indium located therein.