The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2008

Filed:

Sep. 29, 2005
Applicants:

Kazuhiro Yoshida, Aichi-ken, JP;

Yukitaka Hasegawa, Aichi-ken, JP;

Koji Kaga, Aichi-ken, JP;

Inventors:

Kazuhiro Yoshida, Aichi-ken, JP;

Yukitaka Hasegawa, Aichi-ken, JP;

Koji Kaga, Aichi-ken, JP;

Assignee:

Toyoda Gosei Co., Ltd., Aichi-ken, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a semiconductor light-emitting device, a buffer layer, a un-doped GaN layer, a high carrier concentration n-layer, an n-type layer, an emission layer, a p-type layer, and a p-type contact layer are deposited in sequence on a sapphire substrate. The semiconductor light-emitting device includes a light-transparent electrode made of indium tin oxide (ITO) which is deposited in the low pressure vacuum chamber flowing at least oxygen gas through electron beam deposition or ion plating treatment, and a thermal process is carried out.


Find Patent Forward Citations

Yoshida, Kazuhiro. (2008). Method for forming an electrode (U.S. Patent No. 7344967). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7344967

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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