The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2008
Filed:
May. 15, 2001
Takatoshi Tsujimura, Fujisawa, JP;
Osamu Tokuhiro, Shiga-ken, JP;
Mitsuo Morooka, Kawasaki, JP;
Takashi Miyamoto, Chofu, JP;
Takatoshi Tsujimura, Fujisawa, JP;
Osamu Tokuhiro, Shiga-ken, JP;
Mitsuo Morooka, Kawasaki, JP;
Takashi Miyamoto, Chofu, JP;
Au Optronics Corporation, Hsinchu, TW;
Abstract
A method and an apparatus are provided for manufacturing an active matrix device including a top gate type TFT. A manufacturing process of the top gate type TFT includes the steps of forming an oxide film on the inner wall of a CVD processing chamber and arranging a substrate having source and drain electrodes formed thereon in the processing chamber. Additional steps include doping the source and drain electrodes with P, and forming an a-Si layer and a gate insulating film in the processing chamber. Furthermore, an apparatus is provided for manufacturing an active matrix device including a top gate type TFT having the inner surface of the processing chamber coated with the oxide film.