The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2008
Filed:
Dec. 21, 2006
Moon Suhk Suh, Gyeonggi-do, KR;
Jin-koog Shin, Seoul, KR;
Churl Seung Lee, Gyeonggi-do, KR;
Kyoung IL Lee, Seoul, KR;
Moon Suhk Suh, Gyeonggi-do, KR;
Jin-Koog Shin, Seoul, KR;
Churl Seung Lee, Gyeonggi-do, KR;
Kyoung IL Lee, Seoul, KR;
Korea Electronics Technology Institute, Gyeonggi-do, KR;
Abstract
The present invention relates to an AFM (atomic force microscope) cantilever including a field effect transistor (FET) and a method for manufacturing the same; and, more particularly, to a method for manufacturing an AFM cantilever including an FET formed by a photolithography process, wherein an effective channel length of the FET is a nano-scale. Therefore, The present invention can easily implement a simulation for manufacturing the AFM cantilever including the FET by accurately controlling the effective channel length. And also, the present invention can manufacture the AFM cantilever including the FET having the effective channel ranging several tens to several hundreds nanometers by applying the low price photolithography device, thereby enhancing an accuracy and yield of the manufacturing process and drastically reducing process costs.