The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2008
Filed:
Jan. 24, 2005
Joerg Kandler, Cospeda, DE;
Lutz Parthier, Kleinmachnow, DE;
Thomas Kaufhold, Buergel, DE;
Gunther Wehrhan, Jena, DE;
Clemens Kunisch, Armsheim, DE;
Joerg Kandler, Cospeda, DE;
Lutz Parthier, Kleinmachnow, DE;
Thomas Kaufhold, Buergel, DE;
Gunther Wehrhan, Jena, DE;
Clemens Kunisch, Armsheim, DE;
Schott AG, Mainz, DE;
Abstract
The method for producing single crystals includes drying crystal raw material by removing water, reaction of impurities with a scavenger, preferably a metal halide, and homogenizing the melt. The method is performed with the raw material in a melt vessel with a variable-sized through-going opening, in which drying occurs at 100° C. to 600° C. for at least 20 hours with a geometric conductance value for the through-going opening of 2.00 to 30.00 mm; the reacting occurs at 600° C. to 1200° C. for at least nine hours with a geometric conductance value of 0.0020 to 0.300 mmand the homogenizing occurs at above 1400° C. for at least six hours with a geometric conductance value of 0.25 to 1.1 mm. Alternatively the geometric conductance value is the same during drying, reacting and homogenizing and takes a value between 0.25 and 1 mm.