The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2008
Filed:
Nov. 17, 2005
In-yong Song, Suwon-si, KR;
Myung-kook Ahn, Suwon-si, KR;
Sang-don Lee, Gwacheon-si, KR;
Shinichi Hasatomi, Suwon-si, KR;
In-yong Song, Suwon-si, KR;
Myung-kook Ahn, Suwon-si, KR;
Sang-don Lee, Gwacheon-si, KR;
Shinichi Hasatomi, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
An image transfer member, an image transfer device and an image forming system employing the image transfer member and device are disclosed. The image transfer member comprises a base layer, and a surface layer formed from a semi-conductive material above the base layer to receive the developer image transferred from the photoconductor. The surface layer forms a contact inscribed angle θ in the range of 10° to 50° between the surface thereof and the developer image. The image transfer member has a voltage-current characteristic exhibiting a current density (CD) in the range of 0.6 μA/cm≦CD≦1.5 μA/cmat 1 KV voltage, and a voltage decay characteristic exhibiting a voltage decay time (DT) in the range of 0.4 sec≦DT≦3 sec for the voltage decay from 500 V to 100 V. The present invention avoids a transfer defect such as transfer void produced by breakdown caused when a high bias voltage is applied to a developer image having a high electric charge and to significantly improve the transfer efficiency.