The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2008
Filed:
Jan. 24, 2006
Applicants:
Yoshitaka Onaya, Gunma, JP;
Tatsuya Suzuki, Saitama, JP;
Inventors:
Yoshitaka Onaya, Gunma, JP;
Tatsuya Suzuki, Saitama, JP;
Assignee:
Sanyo Electric Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G05F 1/10 (2006.01);
U.S. Cl.
CPC ...
Abstract
A size of a charge pump circuit is reduced as well as its cost. In a positive booster charge pump circuit in an embodiment of this invention, a positive boosted voltage 2VDD generated at its first stage node is used as a gate voltage to turn on a MOS transistor that outputs a high level (VDD) of each of the first, third and fourth clock drivers. And in a negative charge pump circuit, a negative boosted voltage −VDD generated at its first stage node is used as a gate voltage to turn on a MOS transistor that outputs a high level of each of the second and fifth clock drivers.